Abstract: This letter presents a nonlinear model for carbon nanotube (CNT) Schottky diodes, integrating dc, small-signal, and large-signal parameters. A broadband equivalent model, spanning dc to 110 ...
Three Gen 3 SiC Schottky diodes from Vishay come in low-profile SlimSMA HV (DO-221AC) packages with a minimum creepage distance of 3.2 mm. The 1200-V/1- A VS-3C01EJ12-M3, 650-V/2-A VS-3C02EJ07-M3, and ...
These new Schottky diodes enable high-efficiency power conversion in energy-intensive AI server farms. Nexperia has introduced two new 1200 V, 20 A silicon carbide (SiC) Schottky diodes—PSC20120J and ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
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Glass Engraving with Diode Laser — Tutorial!
Learn how to create stunning glass engravings using a diode laser with this step-by-step tutorial. Perfect for adding personalized designs to glassware with precision and ease! #GlassEngraving ...
Researchers have discovered the mechanism for supercurrent rectification, in which current flows primarily in one direction in a superconductor. By using a specific iron-based superconductor, they ...
Vishay has launched 16 SiC Schottky diodes with 650-V and 1200-V ratings in SOT-227 packages, enhancing efficiency in high-frequency applications. The devices offer, according to the manufacturer, the ...
A technical paper titled “Roadmap for Schottky barrier transistors” was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. “In this roadmap we ...
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